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參數(shù)資料
| 型號： | IS42S16160B-7TLI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 1/62頁 |
| 文件大?。?/td> | 646K |
| 代理商： | IS42S16160B-7TLI |
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IS42S83200B
IS42S16160B
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION, Rev. 00E
05/25/06
1
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
ISSI
FEATURES
Clock frequency: 166, 143 MHz
Fully synchronous; all signals referenced to a
positive clock edge
Internal bank for hiding row access/precharge
Power supply
V
DD
IS42S83200B
3.3V
IS42S16160B
3.3V
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Available in Industrial Temperature
Available in 54-pin TSOP-II and 54-ball BGA
(x16 only)
Available in Lead-free
V
DDQ
3.3V
3.3V
OVERVIEW
ISSI
's 256Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 256Mb SDRAM is organized as follows.
32Meg x 8, 16Meg x16
256-MBIT SYNCHRONOUS DRAM
PRELIMINARY INFORMATION
MAY 2006
KEY TIMING PARAMETERS
Parameter
-6
-7
Unit
Clk Cycle Time
CAS
Latency = 3
CAS
Latency = 2
6
8
7
10
ns
ns
Clk Frequency
CAS
Latency = 3
CAS
Latency = 2
166
125
143
100
Mhz
Mhz
Access Time from Clock
CAS
Latency = 3
CAS
Latency = 2
5.4
6.5
5.4
6.5
ns
ns
IS42S83200B
8M x 8 x 4 Banks
IS42S16160B
4M x16x4 Banks
54-pin TSOPII
54-pin TSOPII
54-ball BGA
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S83200B | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S83200B-6T | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S83200B-6TL | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S83200B-7T | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
| IS42S83200B-7TI | 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16160B-7TLI-TR | 功能描述:動態(tài)隨機存取存儲器 256M 3.3v 16Mx16 143MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16160B-7TL-TR | 功能描述:動態(tài)隨機存取存儲器 256M 3.3v 16Mx16 143MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16160B-7T-TR | 功能描述:動態(tài)隨機存取存儲器 256M 3.3v 16Mx16 143MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS42S16160C | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Single Data Rate Synchronous DRAM |
| IS42S16160C-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256 Mb Single Data Rate Synchronous DRAM |
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