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參數(shù)資料
| 型號： | IS42S16100-8T |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16內(nèi)存 |
| 文件頁數(shù)： | 1/78頁 |
| 文件大?。?/td> | 654K |
| 代理商： | IS42S16100-8T |
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IS42S16100
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
1
FEATURES
Clock frequency: 166, 143, 100 MHz
Fully synchronous; all signals referenced to a
positive clock edge
Two banks can be operated simultaneously
and independently
Dual internal bank controlled by A11 (bank
select)
Single 3.3V power supply
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Auto refresh, self refresh
4096 refresh cycles every 128 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Byte controlled by LDQM and UDQM
Package 400-mil 50-pin TSOP II
DESCRIPTION
ISSI
's 16Mb Synchronous DRAM IS42S16100 is organized
as a 524,288-word x 16-bit x 2-bank for improved
performance. The synchronous DRAMs achieve high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
512K Words x 16 Bits x 2 Banks (16-MBIT)
SYNCHRONOUS DYNAMIC RAM
NOVEMBER
2001
PIN CONFIGURATIONS
50-Pin TSOP (Type II)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VCC
I/O0
I/O1
GNDQ
I/O2
I/O3
VCCQ
I/O4
I/O5
GNDQ
I/O6
I/O7
VCCQ
LDQM
WE
CAS
RAS
CS
A11
A10
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
GNDQ
I/O13
I/O12
VCCQ
I/O11
I/O10
GNDQ
I/O9
I/O8
VCCQ
NC
UDQM
CLK
CKE
NC
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A11
Address Input
A0-A10
Row Address Input
A11
Bank Select Address
A0-A7
Column Address Input
I/O0 to I/O15
Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S16100A1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100A1-10T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100A1-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100A1-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S16100A1-10TLI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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