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參數(shù)資料
| 型號(hào)： | IS42LS81600A-7T |
| 英文描述： | RES 23.2K-OHM 1% 0.125W 25PPM THIN-FILM SMD-0805 5K/REEL-7IN-PA |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁(yè)數(shù)： | 15/66頁(yè) |
| 文件大小： | 556K |
| 代理商： | IS42LS81600A-7T |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
15
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
CS
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
RAS
×
H
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
×
H
H
H
H
L
L
L
L
CAS
×
H
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
×
H
H
L
L
H
H
L
L
WE
×
H
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
×
H
L
H
L
H
L
H
L
Address
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
×
×
×
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
×
OC, BA
Command
DESL
NOP
BST
READ/READA
WRIT/ WRITA
ACT
PRE/PALL
REF
MRS/EMRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF
MRS/EMRS
DESL
NOP
BST
EAD/READA
WRIT/WRITA
ACT
PRE/PALL
REF
MRS/EMRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF
MRS/EMRS
Action
Nop Enter row active after tDPL
Nop Enter row active after tDPL
Nop Enter row active after tDPL
Begin read
(6)
Begin new write
ILLEGAL
(2)
ILLEGAL
(2)
ILLEGAL
ILLEGAL
Nop Enter precharge after tDPL
Nop Enter precharge after tDPL
Nop Enter row active after tDPL
ILLEGAL
ILLEGAL
(2, 6)
ILLEGAL
(2)
ILLEGAL
(2)
ILLEGAL
ILLEGAL
Enter idle after tRC1
Nop Enter idle after tRC1
Nop Enter idle after tRC1
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Nop Enter idle after tRSC
Nop Enter idle after tRSC
Nop Enter idle after tRSC
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Write Recovering
Write Recovering
with Auto
Precharge
Refresh
Mode Register
Accessing
FUNCTIONAL TRUTH TABLE Continued:
Note: H=V
IH
, L=V
IL
x= V
IH
or V
IL
, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS42LS81600A-7TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7B | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7T | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS42LS81600A-7TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42R16100E-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42R16320D-7BL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42R16320D-7BLI | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 512M-Bit 32Mx16 2.5V 54-Pin TFBGA |
| IS42RM16160D-7BL | 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 256M (16Mx16) 143MHz Mobile S動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器, 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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