- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄360983 > IS41LV82002-50TI x8 EDO Page Mode DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IS41LV82002-50TI |
| 英文描述： | x8 EDO Page Mode DRAM |
| 中文描述： | x8 EDO公司頁(yè)面模式的DRAM |
| 文件頁(yè)數(shù)： | 4/19頁(yè) |
| 文件大?。?/td> | 157K |
| 代理商： | IS41LV82002-50TI |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
4
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. D
06/24/01
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–
1.0 to +7.0
–
0.5 to +4.6
V
3.3V
V
CC
Supply Voltage
5V
–
1.0 to +7.0
–
0.5 to +4.6
V
3.3V
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Commercial Operation Temperature
Industrial Operation Temperature
0 to +70
-40 to +85
°
C
T
STG
Storage Temperature
–
55 to +125
°
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
3.0
5.0
3.3
5.5
3.6
V
3.3V
V
IH
Input High Voltage
5V
2.4
2.0
—
—
V
CC
+ 1.0
V
CC
+ 0.3
V
3.3V
V
IL
Input Low Voltage
5V
–
1.0
–
0.3
—
—
0.8
0.8
V
3.3V
T
A
Commercial Ambient Temperature
Industrial Ambient Temperature
0
—
—
70
85
°
C
°
C
-40
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
C
IN
2
C
IO
Input Capacitance: A0-A10(A11)
Input Capacitance:
RAS
,
CAS
,
WE
,
OE
Data Input/Output Capacitance: I/O0-I/O3
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV82002-60J | x8 EDO Page Mode DRAM |
| IS41LV82002-60JI | x8 EDO Page Mode DRAM |
| IS41LV82002-60T | x8 EDO Page Mode DRAM |
| IS41LV82002-60TI | x8 EDO Page Mode DRAM |
| IS41LV8512-35T | 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV82002-60J | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EDO Page Mode DRAM |
| IS41LV82002-60JI | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EDO Page Mode DRAM |
| IS41LV82002-60T | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EDO Page Mode DRAM |
| IS41LV82002-60TI | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x8 EDO Page Mode DRAM |
| IS41LV8200-50J | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。