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| 型號(hào)： | IS41LV4100-35J |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 1M X 4 EDO DRAM, 35 ns, PDSO20 |
| 封裝： | 0.300 INCH, SOJ-20 |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大小： | 143K |
| 代理商： | IS41LV4100-35J |
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IS41C4100
IS41LV4100
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00A
09/10/01
1
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 2001, Integrated Silicon Solution, Inc.
1Meg x 4 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
FEATURES
TTL compatible inputs and outputs
Refresh Interval: 1024 cycles/16 ms
Refresh Mode :
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
JEDEC standard pinout
Single power supply
5V ± 10% (IS41C4100)
3.3V ± 10% (IS41LV4100)
Industrail Temperature Range -40
o
C to 85
o
C
DESCRIPTION
The
ISSI
IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit
high-performance CMOS Dynamic Random Access
Memory. Both products offer accelerated cycle access
EDO Page Mode. EDO Page Mode allows 512 random
accesses within a single row with access cycle time as
short as 10ns per 4-bit word.
These features make the IS41C4100 and IS41LV4100 ideally
suited for high
band-width
graphics,
digital signal processing,
high-performance computing systems, and peripheral applications.
The IS41C4100 and IS41LV4100 are available in a 20-pin,
300-mil SOJ package.
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. Fast Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-35
35
10
18
12
60
-60
60
15
30
25
110
Unit
ns
ns
ns
ns
ns
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-I/O3
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
CAS
Column Address Strobe
V
CC
Power
GND
Ground
NC
No Connection
PIN CONFIGURATION
20-Pin SOJ
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
I/O0
I/O1
WE
RAS
A9
A0
A1
A2
A3
Vcc
GND
I/O3
I/O2
CAS
OE
A8
A7
A6
A5
A4
PRELIMINARY INFORMATION
SEPTEMBER 2001
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV4100-60J | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-60JI | 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C44002 | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM(刷新 2K）) |
| IS41C44004 | 4M x 4 DRAM With EDO Page Mode(5V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM(刷新 4K）) |
| IS41LV44002 | 4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 帶擴(kuò)展數(shù)據(jù)輸出頁(yè)模式動(dòng)態(tài)RAM(刷新 2K）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV4100-60J | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-60JI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002 | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV44002-50J | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 EDO Page Mode DRAM |
| IS41LV44002-50JI | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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