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參數(shù)資料
| 型號： | IS41LV32256-30PQ |
| 英文描述： | x32 EDO Page Mode DRAM |
| 中文描述： | X32號，江戶頁面模式的DRAM |
| 文件頁數(shù)： | 14/19頁 |
| 文件大?。?/td> | 157K |
| 代理商： | IS41LV32256-30PQ |
14
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. D
06/24/01
IS41C4400
X
IS41LV4400
X
S
ERIES
ISSI
EDO-PAGE-MODE READ-WRITE CYCLE
(LATE WRITE and READ-MODIFY WRITE Cycles)
Note:
1. t
PC
can be measured from falling edge of
CAS
to falling edge of
CAS
, or from rising edge of
CAS
to rising edge of
CAS
. Both
measurements must meet the t
PC
specifications.
t
RASP
t
RP
ADDRESS
CAS
RAS
Row
Row
t
CRP
t
RCD
t
CSH
t
CP
t
CAH
t
CAS,
t
CLCH
t
RAL
t
RSH
t
CP
t
CP
t
RAH
t
RAD
t
AR
t
ASR
Column
Column
t
CAH
t
CAH
Column
t
ASC
t
ASC
t
CAS,
t
CLCH
t
CAS,
t
CLCH
OE
I/O
WE
t
ASC
t
RWD
t
RCS
t
CWL
t
WP
t
AWD
t
CWD
t
DH
t
DS
t
CAC
t
CLZ
t
AWD
t
CWD
t
CWL
t
WP
t
AWD
t
CWD
t
CWL
t
WP
t
RWL
Open
Open
D
IN
t
OD
D
OUT
t
OE
t
OE
t
OE
t
OD
t
OEH
t
OD
t
DH
t
DS
t
CPA
t
AA
t
CAC
t
CLZ
D
IN
D
OUT
t
DH
t
DS
t
CAC
t
CLZ
D
IN
D
OUT
t
CPA
t
AA
t
RAC
t
AA
t
PC
/ t
PRWC
(1)
Don
’
t Care
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV32256-30TQ | x32 EDO Page Mode DRAM |
| IS41LV32256-35PQ | x32 EDO Page Mode DRAM |
| IS41LV32256-35TQ | x32 EDO Page Mode DRAM |
| IS41LV44002-50J | x4 EDO Page Mode DRAM |
| IS41LV82002-50JI | x8 EDO Page Mode DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV32256-30TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-35PQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-35TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV4100 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV4100-35J | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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