- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377549 > IS41LV16400 (Integrated Silicon Solution, Inc.) 4M x 16 DRAM With EDO Page Mode(3.3V,4M x 16 帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | IS41LV16400 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 4M x 16 DRAM With EDO Page Mode(3.3V,4M x 16 帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)RAM) |
| 中文描述： | 4米× 16的DRAM與江戶頁面模式（3.3伏，4米× 16帶擴(kuò)展數(shù)據(jù)輸出頁模式動(dòng)態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/19頁 |
| 文件大小： | 141K |
| 代理商： | IS41LV16400 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/18/99
1
IS41LV16400
4M x 16
WITH EDO PAGE MODE
ISSI
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
FEATURES
Extended Data-Out (EDO) Page Mode access cycle
TTL compatible inputs and outputs; tristate I/O
Refresh Interval: 4,096 cycles / 64 ms
Auto refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
Low Standby power dissipation:
– 1.8mW(max) CMOS Input Level
Single power supply: 3.3V ± 10%
Byte Write and Byte Read operation via two
CAS
Extended Temperature Range -30
o
C to 85
o
C
Industrail Temperature Range -40
o
C to 85
o
C
DESCRIPTION
The
ISSI
IS41LV16400 is 4,194,304 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle access called
EDO Page Mode. EDO Page Mode allows 1,024 random
accesses within a single row with access cycle time as
short as 20 ns per 16-bit word. The Byte Write control, of
upper and lower byte, makes the IS41LV16400 ideal for
use in 16-bit wide data bus systems.
These features make the S41LV16400 ideally suited for
high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The IS41LV16400 is packaged in a 50-pin TSOP (Type II).
JEDEC standard pinout.
(64-MBIT) DYNAMIC RAM
KEY TIMING PARAMETERS
Parameter
-50
-60
Unit
Max.
RAS
Access Time (t
RAC
)
50
60
ns
Max.
CAS
Access Time (t
CAC
)
13
15
ns
Max. Column Address Access Time (t
AA
)
25
30
ns
Min. EDO Page Mode Cycle Time (t
PC
)
20
25
ns
Min. Read/Write Cycle Time (t
RC
)
84
104
ns
NOVEMBER 1999
PIN CONFIGURATION
50-Pin TSOP (Type II)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
VCC
W
RAS
NC
NC
NC
NC
A0
A1
A2
A3
A4
A5
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
GND
LCAS
UCAS
OE
NC
NC
NC
A11
A10
A9
A8
A7
A6
GND
PIN DESCRIPTIONS
A0-A11
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS41LV32256 | 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32帶擴(kuò)展數(shù)據(jù)輸出動(dòng)態(tài)RAM) |
| IS42G32256-10PQ | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
| IS42G32256-7PQ | POT 10K OHM 9MM VERT NO BUSHING |
| IS42G32256-8PQ | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
| IS42G32256 | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41LV16400-50T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16400-50TE | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16400-50TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16400-60T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16400-60TE | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。