參數(shù)資料
型號: IS41C8512-60T
英文描述: 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 為512k × 8(4兆位)的動態(tài)與江戶頁面模式內(nèi)存
文件頁數(shù): 16/18頁
文件大小: 215K
代理商: IS41C8512-60T
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相關(guān)PDF資料
PDF描述
IS41C8512-60TI 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV8512 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV8512-35K 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV8512-35KI 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS42S16400 2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS41C8512-60TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41DK 制造商:IDEC Corporation 功能描述:Inductive Sensor
IS41K 制造商:IDEC CORPORATION 功能描述:SENS.IND. 10-30VDC NPN NO
IS41KS 制造商:IDEC CORPORATION 功能描述:958601820 SENS.IND. 10-30VDC NPN NO
IS41L 制造商:IDEC CORPORATION 功能描述:SENS.IND. 10-30VDC NPN NO