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參數(shù)資料
| 型號： | IS41C16256-60T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256K X 16 EDO DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, MS-24, TSOP2-40/44 |
| 文件頁數(shù)： | 8/20頁 |
| 文件大小： | 215K |
| 代理商： | IS41C16256-60T |
IS41C16256
IS41LV16256
8
Integrated Circuit Solution Inc.
DR001-0E 01/25/2002
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-25
-35
-50
-60
Symbol
Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max. Units
t
ACH
Column-Address Setup Time to
CAS
Precharge during WRITE Cycle
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
(24)
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
(24)
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Output Disable Delay from
WE
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
CAS
Setup Time (CBR REFRESH)
(30, 20)
CAS
Hold Time (CBR REFRESH)
(30, 21)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Refresh Period (512 Cycles)
Transition Time (Rise or Fall)
(2, 3)
15
—
15
—
15
—
15
—
ns
t
OEH
5
—
8
—
10
—
15
—
ns
t
DS
t
DH
t
RWC
t
RWD
0
5
—
—
—
—
0
6
—
—
—
—
0
8
—
—
—
—
0
10
140
80
—
—
—
—
ns
ns
ns
ns
65
35
80
45
125
70
t
CWD
t
AWD
t
PC
17
21
10
—
—
—
25
30
12
—
—
—
34
42
20
—
—
—
36
49
25
—
—
—
ns
ns
ns
t
RASP
t
CPA
t
PRWC
25
—
32
100K
14
—
35
—
40
100K
21
—
50
—
47
100K
27
—
50
—
56
100K
34
—
ns
ns
ns
t
COH
t
OFF
5
3
—
15
5
3
—
15
5
3
—
15
5
3
—
15
ns
ns
t
WHZ
t
CLCH
3
10
15
—
3
10
15
—
3
10
15
—
3
10
15
—
ns
ns
t
CSR
t
CHR
t
ORD
5
7
0
—
—
—
8
8
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
ns
ns
ns
t
REF
t
T
—
1
8
50
—
1
8
50
—
1
8
50
—
1
8
50
ms
ns
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 pF (Vcc = 5.0V
±
10%)
One TTL Load and 50 pF (Vcc = 3.3V
±
10%)
Input timing reference levels: V
IH
= 2.4V, V
IL
= 0.8V (Vcc = 5.0V
±
10%);
V
IH
= 2.0V, V
IL
= 0.8V (Vcc = 3.3V
±
10%)
Output timing reference levels: V
OH
= 2.0V, V
OL
= 0.8V (Vcc = 5V
±
10%, 3.3V
±
10%)
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| IS41C16256-60TI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS41C16256-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16256C | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mb DRAM WITH EDO PAGE MODE |
| IS41C16256C-35TLI | 功能描述:動態(tài)隨機存取存儲器 4M, 5V, EDO 動態(tài)隨機存取存儲器 35ns, 40 pin TSOP II RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41C16256C-35TLI-TR | 功能描述:動態(tài)隨機存取存儲器 4M, 5V, EDO 動態(tài)隨機存取存儲器 Async,256Kx16,35ns RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41C16257 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
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