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參數(shù)資料
| 型號： | IRS23364DSTRPBF |
| 廠商： | International Rectifier |
| 英文描述： | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| 中文描述： | 3相高壓柵極驅動器集成電路 |
| 文件頁數(shù)： | 31/45頁 |
| 文件大小： | 952K |
| 代理商： | IRS23364DSTRPBF |
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IRS2336xD Family
www.irf.com
2007 International Rectifier
31
Q1
ON
D2
V
S1
Q2
OFF
I
U
DC+ BUS
DC- BUS
Figure 26: Q1 conducting
Figure 27: D2 conducting
Also when the V phase current flows from the inductive load back to the inverter (see Figures 28 and 29), and Q4
IGBT switches on, the current commutation occurs from D3 to Q4. At the same instance, the voltage node, V
S2
,
swings from the positive DC bus voltage to the negative DC bus voltage.
DC+ BUS
Q3
OFF
D3
D4
DC- BUS
V
S2
Q4
OFF
I
V
Figure 28: D3 conducting
Figure 29: Q4 conducting
However, in a real inverter circuit, the V
S
voltage swing does not stop at the level of the negative DC bus, rather it
swings below the level of the negative DC bus. This undershoot voltage is called “negative V
S
transient”.
The circuit shown in Figure 30 depicts one leg of the three phase inverter; Figures 31 and 32 show a simplified
illustration of the commutation of the current between Q1 and D2. The parasitic inductances in the power circuit from
the die bonding to the PCB tracks are lumped together in L
C
and L
E
for each IGBT. When the high-side switch is on,
V
S1
is below the DC+ voltage by the voltage drops associated with the power switch and the parasitic elements of
the circuit. When the high-side power switch turns off, the load current momentarily flows in the low-side
freewheeling diode due to the inductive load connected to V
S1
(the load is not shown in these figures). This current
flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a negative voltage between
V
S1
and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential than the V
S
pin).
相關PDF資料 |
PDF描述 |
|---|---|
| IRS2336D | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336DJPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336DPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336DSPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336DSTRPBF | HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRS23365DMTRPBF | 制造商:International Rectifier 功能描述:CIC MLPQ 7X7 48L - Tape and Reel 制造商:International Rectifier 功能描述:IC DRIVER BRIDGE 3-PHASE 44MLPQ 制造商:International Rectifier 功能描述:T&R / CIC MLPQ 7X7 48L |
| IRS2336D | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HIGH VOLTAGE 3 PHASE GATE DRIVER IC |
| IRS2336DJPBF | 功能描述:功率驅動器IC 3-Phase Gate DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2336DJPBF | 制造商:International Rectifier 功能描述:DRIVER IC |
| IRS2336DJTRPBF | 功能描述:功率驅動器IC 600V 3Phs Drvr IC w/Intgr BSF & Prot RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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