參數(shù)資料
型號(hào): IRS21368SPbF
廠商: International Rectifier
英文描述: 3-PHASE BRIDGE DRIVER
中文描述: 3相橋式驅(qū)動(dòng)器
文件頁(yè)數(shù): 14/23頁(yè)
文件大?。?/td> 614K
代理商: IRS21368SPBF
www.irf.com
14
IRS213(6,62,63,65,66,67,68) (J&S)PbF
1 PCB Layout Tips
1.1 Distance from H to L Voltage
The IRS2136xJ package lacks some pins (see page 11) in order to maximizing the distance between the high voltage
and low voltage pins. It’s strongly recommended to place the components tied to the floating voltage in the respective
high voltage portions of the device (V
B1,2,3
, V
S1,2,3
) side.
1.2 Ground Plane
To minimize noise coupling ground plane must not be placed under or near the high voltage floating side.
1.3 Gate Drive Loops
Current loops behave like an antenna able to receive and transmit EM noise (see Fig. 7). In order to reduce EM coupling
and improve the power switch turn on/off performances, gate drive loops must be reduced as much as possible.
Moreover, current can be injected inside the gate drive loop via the IGBT collector-to-gate parasitic capacitance. The
parasitic auto-inductance of the gate loop contributes to develop a voltage across the gate-emitter increasing the
possibility of self turn-on effect.
Fig. 7. Antenna Loops
1.4 Supply Capacitors
Supply capacitors must be placed as close as possible to the device pins (V
CC
and V
SS
for the ground tied supply, V
B
and
V
S
for the floating supply) in order to minimize parasitic inductance/resistance.
1.5 Routing and Placement
Power stage PCB parasitic may generate dangerous voltage transients for the gate driver and the control logic. In
particular it’s recommended to limit phase voltage negative transients.
In order to avoid such undervoltage it is highly recommended to minimize high side emitter to low side collector distance
and low side emitter to negative bus rail stray inductance. See DT04-4 at
www.irf.com
for more detailed information.
PRELIMINARY
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