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參數(shù)資料
| 型號： | IRS20124SPBF |
| 廠商： | International Rectifier |
| 文件頁數(shù)： | 13/27頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC DIGITAL AUDIO DRIVER 14-SOIC |
| 標(biāo)準(zhǔn)包裝： | 55 |
| 類型： | MOSFET 驅(qū)動器 |
| 應(yīng)用： | 放大器，接收器 |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 14-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 14-SOIC（窄型） |
| 包裝： | 管件 |
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20
IRS20124S(PbF)
Functional description
Programmable Dead-time
The IRS20124 has an internal deadtime generation
block to reduce the number of external components
in the output stage of a Class D audio amplifier.
Selectable deadtime through the DT/SD pin volt-
age is an easy and reliable function, which re-
quires only two external resistors. The deadtime
generation block is also designed to provide a
constant deadtime interval, independent of Vcc
fluctuations. Since the timings are critical to the
audio performance of a Class D audio amplifier,
the unique internal deadtime generation block is
designed to be immune to noise on the DT/SD
pin and the Vcc pin. Noise-free programmable
deadtime function is available by selecting
deadtime from four preset values, which are opti-
mized and compensated.
How to Determine Optimal Deadtime
Please note that the effective deadtime in an actual
application differs from the deadtime specified in
this datasheet due to finite fall time, tf. The
deadtime value in this datasheet is defined as the
time period from the starting point of turn-off on
one side of the switching stage to the starting
point of turn-on on the other side as shown in Fig.
5. The fall time of MOSFET gate voltage must be
subtracted from the deadtime value in the
datasheet to determine the effective dead time of
a Class D audio amplifier.
(Effective deadtime)
= (Deadtime in datasheet) – (fall time, tf)
HO (or LO)
LO (or HO)
tf
Dead-
time
Effective dead-time
10%
90%
Effective Deadtime
A longer deadtime period is required for a MOSFET
with a larger gate charge value because of the
longer tf. A shorter effective deadtime setting is
always beneficial to achieve better linearity in the
Class D switching stage. However, the likelihood
of shoot-through current increases with narrower
deadtime settings in mass production. Negative
values of effective deadtime may cause excessive
heat dissipation in the MOSFETs, potentially
leading to their serious damage. To calculate the
optimal deadtime in a given application, the fall
time (tf)for both output voltages, HO and LO, in
the actual circuit needs to be measured. In
addition, the effective deadtime can also vary with
temperature and device parameter variations.
Therefore, a minimum effective deadtime of 10 ns
is recommended to avoid shoot-through current
over the range of operating temperatures and
supply voltages.
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| IRS20124STRPBF | 功能描述:功率驅(qū)動器IC Dig Aud Drvr w/Deadtime & Prot RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2052M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:2 CH Digital Audio Amplifier |
| IRS2052MPBF | 制造商:International Rectifier 功能描述:IRS2053 Series 3 Channel 6.2 W 60 dB Half Bridge Digital Audio Amplifier-MLPQ-48 |
| IRS2052MTRPBF | 功能描述:功率驅(qū)動器IC Gen5 HVIC 200V 48L 2Ch Dig Aud Drvr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IRS2053MPBF | 功能描述:音頻放大器 200V 0A OTHER RoHS:否 制造商:STMicroelectronics 產(chǎn)品:General Purpose Audio Amplifiers 輸出類型:Digital 輸出功率: THD + 噪聲: 工作電源電壓:3.3 V 電源電流: 最大功率耗散: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFP-64 封裝:Reel |
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