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參數(shù)資料
| 型號(hào)： | IRLWI520A |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進(jìn)的功率MOSFET |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 233K |
| 代理商： | IRLWI520A |
IRLW/I520A
BV
DSS
= 100 V
R
DS(on)
= 0.22
Ω
I
D
= 9.2 A
100
9.2
6.5
32
±
20
112
9.2
4.9
6.5
3.8
49
0.33
- 55 to +175
300
3.04
40
62.5
--
--
--
1
I
Avalanche Rugged Technology
I
Rugged Gate Oxide Technology
I
Lower Input Capacitance
I
Improved Gate Charge
I
Extended Safe Operating Area
I
175
℃
Operating Temperature
I
Lower Leakage Current : 10
μ
A (Max.) @ V
DS
= 100V
I
Lower R
DS(ON)
: 0.176
Ω
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
℃
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
℃
)
Continuous Drain Current (T
C
=100
℃
)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25
℃
)
Total Power Dissipation (T
C
=25
℃
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
③
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
℃
A
℃
*
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