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參數(shù)資料
| 型號： | IRLL3303 |
| 廠商： | International Rectifier |
| 元件分類： | 速度傳感器和接近開關 |
| 英文描述： | Rotational Speed Sensors; Package: PG-SSO-2; Application: -; Technology: -; Direction detection (PWM): -; Vibration Suppression: -; Type of hysteresis: - |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 161K |
| 代理商： | IRLL3303 |
IRLL3303
2
www.irf.com
Parameter
Min. Typ. Max. Units
30
–––
––– 0.034 –––
–––
––– 0.031
–––
––– 0.045
1.0
–––
5.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
34
–––
4.4
–––
10
–––
7.2
–––
22
–––
33
–––
28
–––
840
–––
340
–––
170
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.6A
V
GS
= 4.5V, I
D
= 2.3A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 2.3A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -16V
V
GS
= 16V
I
D
= 4.6A
V
DS
= 24V
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 15V
I
D
= 4.6A
R
G
= 6.2
R
D
= 3.2
,
See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
25
250
-100
100
50
6.5
16
–––
–––
–––
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 4.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.6A
di/dt = 100A/μs
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
65
160
1.3
98
240
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
37
0.91
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
4.6A, di/dt
≤
110A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
V
DD
= 15V, starting T
J
= 25°C, L = 13mH
R
G
= 25
, I
AS
= 4.6A. (See Figure 12)
Rev. #
Parameters
V
GS(th)
(Max.)
V
GS
(Max.)
Old spec.
2.5V
±20
New spec.
No spec.
±16
Comments
Revision Date
11/1/96
11/1/96
1
1
Removed V
GS(th)
(Max). Specification
Decrease V
GS
(Max). Specification
Specification changes
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