參數(shù)資料
型號(hào)： IRLIB9343
廠商： International Rectifier
英文描述： DIGITAL AUDIO MOSFET
中文描述： 數(shù)字音頻MOSFET的
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 190K
代理商： IRLIB9343
www.irf.com
5
Fig 13.
Maximum Avalanche Energy Vs. Drain Current
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 14.
Typical Avalanche Current Vs.Pulsewidth
Fig 15.
Maximum Avalanche Energy Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
4.0
6.0
8.0
10.0
-VGS, Gate-to-Source Voltage (V)
0
100
200
300
400
500
600
RD
)
TJ = 25°C
TJ = 125°C
ID = -14A
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
1000
-
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
tav
0.01
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
0
200
400
600
800
1000
EA
ID
TOP
-5.0A
-5.6A
BOTTOM
-10A
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
40
80
120
160
200
EA
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = -10A
相關(guān)PDF資料
PDF描述
IRLIZ14G POWER MOSFET
IRLIZ24N HEXFET Power MOSFET
IRLIZ34G POWER MOSFET
IRLIZ34N Power MOSFET
IRLIZ44G HEXFET POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRLIB9343PBF 功能描述:MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLIZ14A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-262AA
IRLIZ14G 功能描述:MOSFET N-Chan 60V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLIZ14G_09 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
IRLIZ14GPBF 功能描述:MOSFET N-Chan 60V 8.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*