參數(shù)資料
型號: IRLI620
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 200V的電壓,的Rds(on)\u003d 0.80ohm,身份證\u003d 4.0a上)
文件頁數(shù): 7/8頁
文件大?。?/td> 339K
代理商: IRLI620
IRLI620G
Fig 14.
For N-Channel HEXFETS
*
VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
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相關代理商/技術參數(shù)
參數(shù)描述
IRLI620A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLI620ATU 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI620G 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI620GPBF 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRLI630 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET