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參數(shù)資料
| 型號(hào)： | IRLC1304 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | CHIP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 40V的五（巴西）決策支持系統(tǒng)|芯片 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 45K |
| 代理商： | IRLC1304 |
Parameter
V
(BR)DSS
R
DS(on)
Description
Guaranteed (Min/Max)
40V Min.
0.020
Max.
0.030
Max.
1.0V Min., 3.0V Max.
25μA Max.
± 15μA Max.
175°C Max.
Test Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 5.0A
V
GS
= 4.5V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±16V
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage
Operating Junction and
Storage Temperature Range
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
99% Al, 1% Si (0.004 mm)
0.181" x 0.303" ( 4.6mm x 7.7 mm)
150mm, with std. < 100 > flat
.014" + / -.003"
01-5298
0.1 mm
0.13mm Diameter Minimum, 0.51mm Max.
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Recommended Die Attach Conditions
40 V
Size 4.6
Rds(on)=0.020
6" Wafer
3/23/99
Mechanical Data
Die Outline
Reference Standard IR packaged part ( for design ) : IRLBL1304
Electrical Characteristics ( Wafer Form )
IRLC1304
HEXFET
Power MOSFET Die in Wafer Form
S
D
G
PD- 91871
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