參數(shù)資料
型號(hào): IRL5NJ7413
英文描述: 30V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
中文描述: 30V的單個(gè)N -溝道高可靠性的貼片MOSFET的- 0.5軟件包
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 113K
代理商: IRL5NJ7413
IRL5NJ7413
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID
Tc = 25
°
C
Tj = 150
°
C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
10
100
0
500
1000
1500
2000
2500
3000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
20
40
60
80
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
22A
V
= 6V
DS
V
= 15V
DS
V
= 24V
DS
0.1
1
10
100
0.4
0.8
1.2
1.6
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
相關(guān)PDF資料
PDF描述
IRL5Y7413CM 30V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
IRL610S TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-263AB
IRL611 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) | TO-220AB
IRL610S 200V N-Channel Power MOSFET(漏源電壓為200V的N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
IRL621 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | TO-220AB
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