參數(shù)資料
型號(hào)： IRL3705ZS
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁數(shù)： 2/12頁
文件大?。?/td> 296K
代理商： IRL3705ZS
2
www.irf.com
S
D
G
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Min.
55
–––
–––
–––
–––
1.0
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.055
–––
6.5
8.0
–––
11
–––
12
–––
3.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
40
60
12
–––
21
–––
17
–––
240
–––
26
–––
83
–––
V
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
m
V
GS(th)
gfs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
V
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
–––
4.5
–––
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
nH
L
S
Internal Source Inductance
–––
7.5
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
2880
420
–––
–––
–––
–––
–––
–––
220
1500
330
510
–––
–––
–––
–––
pF
Min.
–––
Typ. Max. Units
–––
75
A
–––
–––
340
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
16
7.4
1.3
24
11
V
ns
nC
V
GS
= 5.0V
V
DD
= 28V
I
D
= 43A
R
G
= 4.3
V
GS
= 5.0V
T
J
= 25°C, I
S
= 52A, V
GS
= 0V
T
J
= 25°C, I
F
= 43A, V
DD
= 28V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 52A
V
GS
= 5.0V, I
D
= 43A
V
GS
= 4.5V, I
D
= 30A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 52A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
I
D
= 43A
V
DS
= 44V
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