- 您現(xiàn)在的位置：買賣IC網 > PDF目錄360968 > IRL3502S 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package PDF資料下載
參數(shù)資料
| 型號： | IRL3502S |
| 英文描述： | 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| 中文描述： | 20V的單個N -溝道HEXFET功率MOSFET的一項D2 - PAK封裝 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | IRL3502S |
IRL3502S
Parameter
Min. Typ. Max. Units
20
–––
–––
0.019 –––
–––
––– 0.008
–––
––– 0.007
0.70
–––
77
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
–––
140
–––
96
–––
130
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 64A
V
GS
= 7.0V, I
D
= 64A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 64A
V
DS
= 20V, V
GS
= 0V
V
DS
= 10V, V
GS
= 0V, T
J
= 150°C
V
GS
= 10V
V
GS
= -10V
I
D
= 64A
V
DS
= 16V
V
GS
= 4.5V, See Fig. 6
V
DD
= 10V
I
D
= 64A
R
G
= 3.8
W,
V
GS
= 4.5V
R
D
= 0.15
W,
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 15V
= 1.0MHz, See Fig. 5
V
(BR)DSS
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
W
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
25
250
100
-100
110
27
39
–––
–––
–––
–––
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4700 –––
1900 –––
640
pF
–––
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 190μH
R
G
= 25
W
, I
AS
= 64A.
I
SD
￡
64A, di/dt
￡
86A/μs, V
DD
￡
V
(BR)DSS
,
T
J
￡
150°C
Notes:
Pulse width
￡
300μs; duty cycle
￡
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 64A, V
GS
= 0V
T
J
= 25°C, I
F
= 64A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
87
200
1.3
130
310
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
110
420
A
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
7.5
–––
I
DSS
Drain-to-Source Leakage Current
Uses IRL3502 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
相關PDF資料 |
PDF描述 |
|---|---|
| IRL3502S | HEXFET Power MOSFET,Ideal for CPU Core DC-DC Converters(HEXFET功率MOS場效應管,理想用于CPU 核心 DC-DC 轉換器) |
| IRL3705 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-220AB |
| IRL3705NL | (186.82 k) |
| IRL3705NS | (186.82 k) |
| IRL3705S | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | TO-252VAR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRL3502SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK |
| IRL3502SPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 8mOhms 73.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL3502STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 110A 3-Pin(2+Tab) D2PAK T/R |
| IRL3502STRLPBF | 功能描述:MOSFET N-CH 20V 110A D2PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRL3502STRR | 功能描述:MOSFET N-CH 20V 110A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復。