參數(shù)資料
型號： IRL3303L
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-262AA
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 38A條（丁）|對262AA
文件頁數(shù)： 2/10頁
文件大?。?/td> 206K
代理商： IRL3303L
IRL3303S/L
Parameter
Min. Typ. Max. Units
30
–––
–––
0.035 –––
–––
––– 0.026
–––
––– 0.040
1.0
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.4
–––
200
–––
14
–––
36
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 17A
T
J
= 150°C
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 20A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 20A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 20A
R
G
= 6.5
R
D
= 0.7
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
–––
25
250
100
-100
26
8.8
15
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
870
340
170
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
7.5
nH
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
20A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
V
DD
= 15V, starting T
J
= 25°C, L = 470μH
R
G
= 25
, I
AS
= 20A. (See Figure 12)
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Uses IRL3303 data and test conditions.
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
72
180
1.3
110
280
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
38
140
S
D
G
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