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參數(shù)資料
| 型號： | IRL3103L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 12mohm，身份證\u003d 64A條） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 125K |
| 代理商： | IRL3103L |
IRL3103S/IRL3103L
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 34A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 34A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
57
110
1.2
86
170
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
64
220
A
Starting T
J
= 25
°
C, L = 220μH
R
G
= 25
, I
AS
= 34A, V
GS
=10V (See Figure 12)
I
SD
≤
34A, di/dt
≤
120A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175
°
C .
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
Parameter
Min. Typ. Max. Units
30
–––
–––
0.028
–––
–––
–––
–––
–––
1.0
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.9
–––
120
–––
14
–––
9.1
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 34A
V
GS
= 4.5V, I
D
= 28A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 34A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 16V
V
GS
= -16V
I
D
= 34A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 34A
R
G
= 1.8
V
GS
= 4.5V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
I
AS
= 34A, L = 0.22mH
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/
°
C
12
16
–––
–––
25
250
100
-100
33
5.9
17
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
E
AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
1320 130
1650
–––
650
110
–––
–––
pF
mJ
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
m
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