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參數(shù)資料
| 型號： | IRL2910 |
| 廠商： | International Rectifier |
| 英文描述： | RES THICK FILM POWER 10 OHM 5W |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 124K |
| 代理商： | IRL2910 |
IRL2910
Parameter
Min. Typ. Max. Units
100
–––
–––
0.12
–––
––– 0.026
–––
––– 0.030
–––
––– 0.040
1.0
–––
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
–––
100
–––
49
–––
55
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 29A
V
GS
= 5.0V, I
D
= 29A
V
GS
= 4.0V, I
D
= 24A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 29A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 29A
V
DS
= 80V
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 29A
R
G
= 1.4
,
V
GS
= 5.0V
R
D
= 1.7
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
–––
25
250
100
-100
140
20
81
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3700
630
330
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
D
Internal Drain Inductance
–––
4.5
–––
L
S
Internal Source Inductance
–––
7.5
–––
R
DS(on)
Static Drain-to-Source On-Resistance
μA
ns
nH
S
D
G
Source-Drain Ratings and Characteristics
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 1.2mH
R
G
= 25
, I
AS
= 29A. (See Figure 12)
I
SD
≤
29A, di/dt
≤
490A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 29A, V
GS
= 0V
T
J
= 25°C, I
F
= 29A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
240
1.8
1.3
350
2.7
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
S
D
G
55
190
A
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