參數(shù)資料
型號(hào): IRL2703S
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 1/38頁(yè)
文件大?。?/td> 739K
代理商: IRL2703S
MC33701
Rev 4.0, 05/2005
Freescale Semiconductor
Technical Data
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
Freescale Semiconductor, Inc., 2005. All rights reserved.
1.5 A Switch-Mode Power
Supply with Linear Regulator
The 34701 provides the means to efficiently supply the Freescale
Power QUICC I, II, and other families of Freescale
microprocessors and DSPs. The 34701 incorporates a high-
performance switching regulator, providing the direct supply for the
microprocessor’s core, and a low dropout (LDO) linear regulator
control circuit providing the microprocessor I/O and bus voltage.
The switching regulator is a high-efficiency synchronous buck
regulator with integrated N-channel power MOSFETs to provide
protection features and to allow space-efficient, compact design.
The 34701 incorporates many advanced features; e.g., precisely
maintained up/down power sequencing, ensuring the proper
operation and protection of the CPU and power system.
Features
Operating Voltage from 2.8 V to 6.0 V
High-Accuracy Output Voltages
Fast Transient Response
Switcher Output Current Up to 1.5 A
Undervoltage Lockout and Overcurrent Protection
Enable Inputs and Programmable Watchdog Timer
Voltage Margining via I
2
C Bus
Reset with Programmable Power-ON Delay
Pb-Free Packaging Designated by Suffix Code EK
I
2
C is a trademark of Philips Corporation.
Figure 1. 34701 Simplified Application Diagram
POWER SUPPLY
INTEGRATED CIRCUIT
34701
ORDERING INFORMATION
Device
Temperature
Range (T
A
)
Package
MC34701EK/R2
-40 to 85°C
32 SOICW
EK (Pb-FREE) SUFFIX
98AARH99137A
32-TERMINAL SOICW
Other
Circuits
RT
VBD
VBST
VDDH (I/Os)
VDDL (Core)
MPC8xxx
34701
2.8 V to 6.0 V Input
VIN2
CLKSEL
FREQ
PORESET
GND
SDA
SCL
Adjustable:
0.8 V to VIN -
Dropout
ADDR
VIN1
LDRV
CS
LDO
LFB
RST
SW
PGND
INV
BOOT
VOUT
CLKSYN
Optional
EN1
EN2
VBST
Adjustable:
0.8 V to VIN -
Dropout
VDDI
相關(guān)PDF資料
PDF描述
IRLZ40 N-CHANNEL LOGIC LEVEL MOSFET
IRLZ44 N-CHANNEL LOGIC LEVEL MOSFET
IRLZ44NL Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A)
IRLZ44 Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)
IRLZ44NS Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRL2703SPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 40mOhms 10nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRL2703STRL 功能描述:MOSFET N-CH 30V 24A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL2703STRLPBF 功能描述:MOSFET N-CH 30V 24A D2PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL2703STRR 功能描述:MOSFET N-CH 30V 24A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL2910 制造商:International Rectifier 功能描述:MOSFET N LOGIC TO-220