參數(shù)資料
型號(hào)： IRL1104S
英文描述： 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
中文描述： 單40V的N溝道HEXFET功率MOSFET的一項(xiàng)D2 - PAK封裝
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 192K
代理商： IRL1104S
IRL1104S/L
2
www.irf.com
Parameter
Min. Typ. Max. Units
40
–––
–––
0.04
–––
––– 0.008
–––
––– 0.012
1.0
–––
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
–––
257
–––
32
–––
64
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
=1mA
V
GS
= 10V, I
D
= 62A
V
GS
= 4.5V, I
D
= 52A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 62A
V
DS
=40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
=62A
V
DS
= 32V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 20V
I
D
=54A
R
G
= 3.6
, V
GS
= 4.5V
R
D
= 0.4
, See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
W
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
–––
25
250
100
-100
68
24
34
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3445 –––
1065 –––
270
pF
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
7.5
nH
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 15V, starting T
J
= 25°C, L = 0.18mH
R
G
= 25
, I
AS
= 62A. (See Figure 12)
I
SD
≤
62A, di/dt
≤
217A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRL1104 data and test conditions.
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
=62A, V
GS
= 0V
T
J
= 25°C, I
F
=62A
di/dt = 100A/μs
–––
–––
–––
–––
–––
–––
–––
–––
84
223
1.3
126
335
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
104
416
S
D
G
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
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