參數(shù)資料
型號： IRL1004L
廠商： International Rectifier
英文描述： N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應(yīng)管)
中文描述： N溝道HEXFET功率MOSFET的（不適用溝道的HEXFET功率馬鞍山場效應(yīng)管）
文件頁數(shù)： 2/10頁
文件大?。?/td> 123K
代理商： IRL1004L
IRL1004S/1004L
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 0.23mH
R
G
= 25
, I
AS
= 78A. (See Figure 12)
I
SD
≤
78A, di/dt
≤
370A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 78A, V
GS
= 0V
T
J
= 25°C, I
F
= 78A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
78
180
1.3
120
270
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
130
520
A
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4
Uses IRL1004 data and test conditions
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
40
–––
–––
0.04
–––
––– 0.0065
–––
––– 0.009
1.0
–––
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
16
–––
210
–––
25
–––
14
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 78A
V
GS
= 4.5V, I
D
= 65A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 78A
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 78A
V
DS
= 32V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 20V,
I
D
= 78A,
R
G
= 2.5
,
R
D
= 0.18
, See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
–––
25
250
100
-100
100
32
43
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
nC
ns
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
5330 –––
1480 –––
320
pF
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
I
DSS
Drain-to-Source Leakage Current
Internal Source Inductance
7.5
nH
相關(guān)PDF資料
PDF描述
IRL1004S N-Channel HEXFET Power MOSFET(N溝道 HEXFET 功率MOS場效應(yīng)管)
IRL1104L TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 104A I(D) | TO-262AA
IRL1104S 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRL1404L 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRL1404S 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRL1004LPBF 功能描述:MOSFET MOSFT 40V 110A 6.5mOhm 66.7nC LogLv RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRL1004PBF 功能描述:MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRL1004S 功能描述:MOSFET N-CH 40V 130A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRL1004SPBF 功能描述:MOSFET 40V 1 N-CH HEXFET 6.5mOhms 66.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRL1004STRL 功能描述:MOSFET N-CH 40V 130A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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