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參數(shù)資料
| 型號(hào)： | IRKV105 |
| 廠商： | International Rectifier |
| 英文描述： | ADD-A-pak GEN V Power Modules THYRISTOR/ THYRISTOR |
| 中文描述： | 地址給柏根V電源模塊晶閘管/晶閘管 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | IRKV105 |
IRKU/V105 Series
3
Bulletin I27136 rev. E 10/02
www.irf.com
T
J
Junction operating temperature
range
Storage temperature range
T
stg
R
thJC
- 40 to 125
Max. internal thermal resistance,
junction to case
Typical thermal resistance
case to heatsink
Mounting torque ± 10%
0.135
Per module, DC operation
R
thCS
T
to heatsink
busbar
5
3
wt
Approximate weight
110 (4)
g (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRKU/V105
Units
Conditions
- 40 to 130
0.1
(5) Available with dv/dt = 1000V/
μ
s, to complete code add S90 i.e. IRKU105/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
°C
K/W
Nm
Mounting surface flat, smooth and greased
I
RRM
I
DRM
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
20
mA
T
J
= 130
o
C, gate open circuit
V
INS
RMS isolation voltage
2500 (1 min)
50 Hz, circuit to base, all terminals
3500 (1 sec)
shorted
dv/dt Max. critical rate of rise
of off-state voltage (5)
T
= 130
o
C, linear to 0.67 V
DRM
,
gate open circuit
Triggering
P
GM
P
G(AV)
Max. average gate power
I
GM
-V
GM
V
GT
required to trigger
Max. peak gate power
12
3
Max. peak gate current
Max. peak negative gate voltage
3
A
10
Max. gate voltage
4.0
2.5
1.7
270
150
80
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
= 125
o
C,
rated V
DRM
applied
T
= 125
o
C,
rated V
DRM
applied
I
GT
Max. gate current
required to trigger
mA
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
0.25
V
6
mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
Parameters
IRK.U/V105
Units
Conditions
Parameters
IRKU/V 105
Units
Conditions
Blocking
V
500
V/
μ
s
Sine half wave conduction
120
o
90
o
Rect. wave conduction
120
o
90
o
Devices
Units
180
o
60
o
30
o
180
o
60
o
30
o
IRKU/V105
0.04
0.05
0.06
0.08
0.12
0.03
0.05
0.06
0.08
0.12
°C/W
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRKV105/04 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|105A I(T) |
| IRKV105/04A | 制造商:IRF 制造商全稱:International Rectifier 功能描述:400V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package |
| IRKV105/04S90 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|105A I(T) |
| IRKV105/06A | 制造商:IRF 制造商全稱:International Rectifier 功能描述:600V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package |
| IRKV105/08 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:THYRISTOR MODULE|SCR|DUAL|CA|800V V(RRM)|105A I(T) |
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