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參數(shù)資料
| 型號(hào)： | IRKU56-16S90PBF |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | 86.35 A, 1600 V, SCR, TO-240AA |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 128K |
| 代理商： | IRKU56-16S90PBF |
IRKU/V41, 56 Series
2
Bulletin I27134 rev. B 09/97
www.irf.com
I
T(AV)
Max. average on-state
45
60
180o conduction, half sine wave,
current
T
C
= 85oC
I
T(RMS
)
Max. RMS on-state
70
95
DC
current
@ T
C
82
80
°C
I
TSM
Max. peak, one cycle
850
1310
t=10ms
No voltage
non-repetitive on-state
890
1370
t=8.3ms reapplied
current
715
1100
t=10ms
100% V
RRM
750
1150
t=8.3ms reapplied
940
1450
t=10ms
T
J
= 25oC,
985
1520
t=8.3ms no voltage reapplied
I2t
Max. I2t for fusing
3.61
8.56
t=10ms
No voltage
3.30
7.82
t=8.3ms reapplied
2.56
6.05
t=10ms
100% V
RRM
2.33
5.53
t=8.3ms reapplied
4.42
10.05
t=10ms
T
J = 25
oC,
4.03
9.60
t=8.3ms no voltage reapplied
I
2
√t
Max. I
2
√t for fusing (1)
36.1
85.6
KA
2
√s
t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold
0.88
0.85
Low level (3)
voltage (2)
0.91
0.88
High level (4)
r
t
Max. value of on-state
5.90
3.53
Low level (3)
slope resistance (2)
5.74
3.41
High level (4)
V
TM
Max. peak on-state
I
TM = π x IT(AV)
voltage
I
FM = π x IF(AV)
di/dt
Max. non-repetitive rate
T
J
= 25oC, from 0.67 V
DRM,
of rise of turned on
150
A/s
I
TM =π x I T(AV), I g
= 500mA,
current
t
r
< 0.5 s, t
p
> 6 s
I
H
Max. holding current
200
T
J = 25
oC, anode supply = 6V,
resistive load, gate open circuit
IL
Max. latching current
400
TJ = 25oC, anode supply = 6V,resistive load
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
IDRM
Code
peak reverse voltage
gate open circuit
125°C
-
VVV
mA
04
400
500
400
08
800
900
800
12
1200
1300
1200
16
1600
1700
1600
(1) I2t for time t
x
= I2
√t x √t
x
.
(2) Average power = V
T(TO)
x I
T(AV) +
r
t
x
(I
T(RMS))
2
(3) 16.7% x
π x I
AV
< I <
π x I
AV
(4) I >
π x I
AV
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Parameters
IRKU/V41
IRKU/V56
Units
Conditions
A
IRKU/V41, 56
15
On-state Conduction
KA
2s
V
m
1.81
1.54
V
mA
Sinusoidal
half wave,
Initial T
J
= T
J
max.
A
T
J = TJ max
TJ = TJ max
T
J
= 25°C
Initial T
J
= T
J
max.
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