參數(shù)資料
型號: IRKU56-04S90PBF
元件分類: 晶閘管
英文描述: 86.35 A, 400 V, SCR, TO-240AA
文件頁數(shù): 3/9頁
文件大?。?/td> 128K
代理商: IRKU56-04S90PBF
IRKU/V41, 56 Series
3
Bulletin I27134 rev. B 09/97
www.irf.com
T
J
Junction operating
temperature range
T
stg
Storage temper. range
- 40 to 125
R
thJC
Max. internal thermal
resistance, junction
0.23
0.20
Per module, DC operation
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
3
wt
Approximate weight
83 (3)
g (oz)
Case style
TO-240AA
JEDEC
Thermal and Mechanical Specifications
Parameters
IRKU/V41
IRKU/V56
Units
Conditions
- 40 to 125
0.1
5
(5) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. IRKU41/16S90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
°C
K/W
Nm
Mountingsurfaceflat,smoothandgreased.
Flatness < 0.03 mm; roughness
< 0.02mm
I
RRM
Max. peak reverse and
I
DRM
off-state leakage current
15
mA
T
J
= 125 oC, gate open circuit
at VRRM, VDRM
V
INS
RMS isolation voltage
2500
(1 min)
50 Hz, circuit to base, all terminals
3500
(1 sec)
shorted
dv/dt Max. critical rate of rise
T
J
= 125oC, linear to 0.67 V
DRM,
of off-state voltage (5)
gate open circuit
Triggering
P
GM
Max. peak gate power
10
P
G(AV) Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GM
Max. peak negative
gate voltage
V
GT
Max. gate voltage
4.0
TJ= - 40°C
required to trigger
2.5
TJ = 25°C
1.7
TJ = 125°C
I
GT
Max. gate current
270
TJ= - 40°C
required to trigger
150
mA
TJ = 25°C
80
TJ = 125°C
V
GD
Max. gate voltage
that will not trigger
I
GD
Max. gate current
that will not trigger
Parameters
IRKU/V41
IRKU/V56
Units
Conditions
0.25
V
6mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
W
V
10
T
J
= 125oC,
rated V
DRM
applied
T
J
= 125oC,
rated V
DRM
applied
Parameters
IRKU/V41, 56
Units
Conditions
Blocking
V
500
V/
s
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