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參數(shù)資料
| 型號： | IRKL56/12S90 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 135 A, 1200 V, SCR, TO-240AA |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 162K |
| 代理商： | IRKL56/12S90 |
IRK.41, .56 Series
2
Bulletin I27131 rev. C 09/97
www.irf.com
I
T(AV)
Max. average on-state
current (Thyristors)
45
60
180o conduction, half sine wave,
I
F(AV)
Maximum average
45
60
T
C
= 85oC
forward current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
Max. peak, one cycle
850
1310
t=10ms No voltage
or
non-repetitive on-state
890
1370
t=8.3ms reapplied
I
FSM
or forward current
715
1100
t=10ms 100% V
RRM
750
1150
t=8.3ms reapplied
940
1450
t=10ms T
J
= 25oC,
985
1520
t=8.3ms no voltage reapplied
I
2t
Max. I
2t for fusing
3.61
8.56
t=10ms No voltage
3.30
7.82
t=8.3ms reapplied
2.56
6.05
t=10ms 100% V
RRM
2.33
5.53
t=8.3ms reapplied
4.42
10.05
t=10ms T
J = 25
oC,
4.03
9.60
t=8.3ms no voltage reapplied
I
2
√t
Max. I
2
√t for fusing (1)
36.1
85.6
KA
2
√s
t=0.1 to 10ms, no voltage reapplied
V
T(TO)
Max. value of threshold
0.88
0.85
Low level (3)
voltage (2)
0.91
0.88
High level (4)
r
t
Max. value of on-state
5.90
3.53
Low level (3)
slope resistance (2)
5.74
3.41
High level (4)
V
TM
Max. peak on-state or
I
TM = π x IT(AV)
T
J
= 25oC
V
FM
forward voltage
I
FM = π x IF(AV)
di/dt
Max. non-repetitive rate
T
J
= 25oC, from 0.67 VDRM,
of rise of turned on
I
TM
=
π x I
T(AV),
I
g
= 500mA,
current
t
r
< 0.5 s, t
p
> 6 s
T
J
= 25oC, anode supply = 6V,
resistive load, gate open circuit
IL
Max. latching current
400
TJ = 25
oC, anode supply = 6V,resistive load
T
J
= T
J
max
TJ = TJ max
Parameters
IRK.41
IRK.56
Units
Conditions
100
135
(1) I
2t for time t
x
= I2
√t x √t
x
(2) Average power
= V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3) 16.7% x
π x I
AV
< I <
π x I
AV
(4) I >
π x I
AV
On-state Conduction
I
H
Max. holding current
200
Initial T
J
= T
J
max.
150
A/s
A
KA
2s
V
m
1.81
1.54
V
mA
or
I
(RMS)
I
(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
I
RRM
Voltage
repetitive
non-repetitive
peak off-state voltage,
I
DRM
Code
peak reverse voltage
gate open circuit
125°C
-
VVV
mA
04
400
500
400
06
600
700
600
08
800
900
800
IRK.41/ .56
10
1000
1100
1000
15
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
Sinusoidal
half wave,
Initial T
J
= T
J
max.
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相關代理商/技術參數(shù) |
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|---|---|
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