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參數(shù)資料
| 型號(hào)： | IRKKF82-08HLN |
| 元件分類： | 晶閘管 |
| 英文描述： | 180 A, 800 V, SCR |
| 封裝： | INT-A-PAK-5 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | IRKKF82-08HLN |
IRK.F82.. Series
3
Bulletin I27103 rev. A 09/97
www.irf.com
T
J
Max. junction operating temperature range
- 40 to 125
°C
Tstg
Max. storage temperature range
- 40 to 150
RthJC
Max. thermal resistance, junction to
0.25
K/W
Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
0.035
K/W
Mounting surface flat and greased
heatsink
Per module
T
Mounting torque ± 10%
IAP to heatsink
4 - 6 (35 - 53)
Nm
busbar to IAP
4 - 6 (35 - 53)
(lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
dv/dt
Maximum critical rate of rise of off-state
1000
V/s
T
J
= 125°C., exponential to = 67% V
DRM
voltage
V
INS
RMS isolation voltage
3000
V
50 Hz, circuit to base, T
J = 25°C, t = 1 s
I
RRM
Maximum peak reverse and off-state
30
mA
T
J = 125°C, rated VDRM/VRRM applied
I
DRM
leakage current
Parameter
IRK.F82..
Units Conditions
Blocking
di/dt
Maximum non-repetitive rate of rise
800
A/s
Gate drive 20V, 20
, tr ≤ 1ms, V
D
= 80% V
DRM
T
J
= 25°C
t
rr
Maximum recovery time
2
s
I
TM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25°C
t
q
Maximum turn-off time
N
L
I
TM = 350A, TJ = 125°C, di/dt = -25A/s,
10
15
s
V
R
= 50V, dv/dt = 400V/s linear to 80% V
DRM
Parameter
IRK.F82..
Units Conditions
Switching
Parameter
IRK.F82..
Units Conditions
Triggering
P
GM
Maximum peak gate power
40
W
f = 50 Hz, d% = 50
P
G(AV)
Maximum peak average gate power
2
W
T
J = 125°C, f = 50Hz, d% = 50
I
GM
Maximum peak positive gate current
5
A
T
J = 125°C, tp < 5ms
- V
GM
Maximum peak negative gate voltage
5
V
I
GT
Max. DC gate current required to trigger
200
mA
T
J = 25°C, Vak
12V, Ra = 6
V
GT
DC gate voltage required to trigger
3
V
I
GD
DC gate current not to trigger
20
mA
T
J = 125°C, rated VDRM applied
V
GD
DC gate voltage not to trigger
0.25
V
Parameter
IRK.F82..
Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
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| IRKKF82-08HL | 180 A, 800 V, SCR |
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| IRKLF81-08HLN | 180 A, 800 V, SCR |
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|---|---|
| IRKL.71 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR |
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| IRKL105/04A | 功能描述:SCR DBL HISCR 400V 105A ADDAPAK RoHS:否 類別:半導(dǎo)體模塊 >> SCR 系列:- 其它有關(guān)文件:SCR Module Selection Guide 標(biāo)準(zhǔn)包裝:10 系列:- 結(jié)構(gòu):串聯(lián) - SCR/二極管 SCR 數(shù)目，二極管:1 SCR，1 個(gè)二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)（最大）:150mA 電流 - 導(dǎo)通狀態(tài) (It (AV))（最大）:95A 電流 - 導(dǎo)通狀態(tài) (It (RMS))（最大）:210A 電流 - 非重復(fù)電涌，50、60Hz (Itsm):1785A，1870A 電流 - 維持(Ih):250mA 安裝類型:底座安裝 封裝/外殼:ADD-A-PAK（3 + 2） 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND |
| IRKL105/04P | 功能描述:SCR模塊 400 Volt 105 Amp RoHS:否 制造商:Vishay Semiconductors 開(kāi)啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開(kāi)啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK |
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