參數(shù)資料
型號(hào): IRIS-X6757
廠商: International Rectifier
英文描述: INTEGRATED SWITCHER
中文描述: 多功能開(kāi)關(guān)
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 239K
代理商: IRIS-X6757
www.irf.com
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions
.
IRIS-X6757
Symbol
I
Dpeak
Definition
Terminals
1 - 3
Max.
Ratings
18
Units
A
Note
Drain Current * 1
Single Pulse
Single Pulse
V
DD
=30V,L=50mH
I
L
=3.53A
Vcc
V
SSOLP
I
FB
V
FB
V
OCPBD
Input voltage for control part
SS/OLP pin voltage
FB pin inflow current
FB pin voltage
O.C.P/F.B pin voltage
4 - 3
5 - 3
6- 3
6- 3
7- 3
35
V
V
-0.5 ~ 6.0
10
-0.5 ~ 9.0
-1.5 ~ 5.0
44
2.8
mA
V
V
within the limits of IFB
With infinite heatsink
Without heatsink
Specified by Vcc x
Icc
Refer to recommended
operating temperature
P
D2
Power dissipation for control part
(MIC) *5
Internal frame temperature in
operation
Operating ambient temperature
Storage temperature
Channel temperature
4 - 3
0.8
W
T
F
-
-20 ~ +125
Top
Tstg
Tch
-
-
-
-20 ~ +125
-40 ~ +125
150
1 - 3
1 - 3
Power dissipation of MOSFET *4
P
D1
E
AS
W
18
Ta=-20~+125
I
DMAX
A
Single pulse avalanche energy *3
1 - 3
326
mJ
Maximum switching current *2
*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve
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