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參數(shù)資料
| 型號： | IRHY7G30CMSE |
| 英文描述： | 1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
| 中文描述： | 1000V 100kRad高可靠性單N溝道MOSFET的看硬化在TO - 257AA封裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 110K |
| 代理商： | IRHY7G30CMSE |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
1.2
0.76
4.8
50
0.4
±20
84
1.2
5.0
3.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
Pre-Irradiation
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY7G30CMSE
1000V, N-CHANNEL
RAD Hard
07/24/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHY7G30CMSE
100K Rads (Si)
I
D
15
1.2A
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
For footnotes refer to the last page
TO-257AA
International Rectifier’s RADHard
TM
HEXFET
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
HEXFET
TECHNOLOGY
PD - 93973D
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