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參數(shù)資料
| 型號(hào)： | IRHY7130CM |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 14.4AI（四）|對(duì)257AA |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 107K |
| 代理商： | IRHY7130CM |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
14.4
9.1
58
75
0.6
±20
150
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
—
—
6.0
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
7.0 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
12/17/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHY7130CM 100K Rads (Si) 0.18
IRHY3130CM 300K Rads (Si) 0.18
IRHY4130CM 600K Rads (Si) 0.18
IRHY8130CM 1000K Rads (Si) 0.18
14.4A
14.4A
14.4A
14.4A
JANSR2N7380
JANSF2N7380
JANSG2N7380
JANSH2N7380
For footnotes refer to the last page
IRHY7130CM
JANSR2N7380
100V, N-CHANNEL
REF: MIL-PRF-19500/614
RAD-Hard
HEXFET
TECHNOLOGY
TO-257AA
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
PD - 91274D
相關(guān)PDF資料 |
PDF描述 |
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| IRHY8130CM | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14.4A I(D) | TO-257AA |
| IRHY53034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY54034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY57034CM | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA |
| IRHY57133CMSE | 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHY7230CM | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7330CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7430CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7434CMSE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHY7G30CMSE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
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