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參數(shù)資料
| 型號(hào)： | IRHSLNA58Z60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 75A條（?。﹟貼片 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | IRHSLNA58Z60 |
08/07/02
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSLNA57064
60V, N-CHANNEL
www.irf.com
1
Features:
Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSNA57064 for Lower
R
DS(on)
For footnotes refer to the last page
* Current is limited by package
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Product Summary
Part Number Radiation Level R
DS(on)
IRHSLNA57064 100K Rads (Si) 6.1m
160nC
IRHSLNA53064 300K Rads (Si) 6.1m
160nC
IRHSLNA54064 600K Rads (Si) 6.1m
160nC
IRHSLNA58064 1000K Rads (Si)
7
.1m
160nC
Q
G
Absolute Maximum Ratings
Parameter
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Schottky and Body Diode Avg. Forward Current
75*
Schottky and Body Diode Avg. Forward Current
75*
Opeating and Storage Temperature Range -55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
75*
75*
300
250
2.0
±20
370
75
25
W
W/°C
V
mJ
A
mJ
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
A
A
°C
PD-94401A
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PDF描述 |
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| IRHSNA53Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA54Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA57Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHSNA53064 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA53064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHSNA53Z60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHSNA54064 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT(SMD-2) |
| IRHSNA54Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 30V N-CHANNEL |
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