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參數資料
| 型號： | IRHQ8110 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝（持有LCC - 28） |
| 文件頁數： | 8/8頁 |
| 文件大小： | 128K |
| 代理商： | IRHQ8110 |
IRHQ7110
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L= 18.7mH,
Peak IL = 3.0A, VGS = 12V
ISD
≤
3.0A, di/dt
≤
165A/
μ
s,
VDD
≤
100V, TJ
≤
150
°
C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
Case Outline and Dimensions
—
LCC-28
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 12/00
Q1
Q2
Q3
Q4
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