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參數(shù)資料
| 型號(hào)： | IRHNJ597130 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 122K |
| 代理商： | IRHNJ597130 |
www.irf.com
3
Radiation Characteristics
IRHNJ597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHNJ597130
2. Part number IRHNJ593130
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=5V @V
=10V @V
=15V @V
=17.5V
Br
37.9
252.6 33.1 -100 -100 -100 -100 -100
I
59.7
314 30.5 -100 -100 -100 -100 -75
Au
82.3
350 28.4 -100 -100 -100
LET
Energy Range
V
DS
(V)
-30 —
-100
-25
—
@V
GS
=20V
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -100 — -100 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100
I
DSS
Zero Gate Voltage Drain Current
— -10 — -10 μA V
DS
=-80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.205 — 0.205
V
GS
= -12V, I
D
=-8.0A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.205 — 0.205
V
GS
= -12V, I
D
=-8.0A
On-State Resistance (SMD-0.5)
V
SD
Diode Forward Voltage
— -5.0 — -5.0 V V
GS
= 0V, IS = -12.5A
100K Rads(Si)
1
300KRads(Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
-120
-100
-80
-60
-40
-20
0
0
5
10
15
20
25
VGS
V
Br
I
Au
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