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參數(shù)資料
| 型號： | IRHNJ54230 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 127K |
| 代理商： | IRHNJ54230 |
www.irf.com
3
Radiation Characteristics
IRHNJ57230
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 200 — 200 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 25 μA V
DS
=160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.204 — 0.255
V
GS
= 12V, I
D
= 8.2A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.2 — 0.25
V
GS
= 12V, I
D
= 8.2A
On-State Resistance (SMD-.5)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHNJ57230, IRHNJ53230 and IRHNJ54230
2. Part number IRHNJ58230
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 13A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
250
0
-5
-10
-15
-20
VGS
V
Br
I
Au
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 200 200 150 150 50
I
59.4
341 32.5 200 200 40 35 30
Au
82.3
350 28.4 50 35 25
LET
Energy Range
V
DS
(V)
—
—
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PDF描述 |
|---|---|
| IRHNJ58230 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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| IRHNJ593034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
| IRHNJ597034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
| IRHNJ593130 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNJ54230SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ54234SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ54Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNJ57034 | 制造商:International Rectifier 功能描述:N CH MOFET 60V .30OHMS 22AMAX - Rail/Tube |
| IRHNJ57130 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 22A 3SMD-0.5 - Rail/Tube |
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