- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384503 > IRHNJ4130 (International Rectifier) 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY PDF資料下載
參數(shù)資料
| 型號(hào)： | IRHNJ4130 |
| 廠商： | International Rectifier |
| 英文描述： | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| 中文描述： | 100V的N通道抗輻射HEXFET MOSFET技術(shù) |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | IRHNJ4130 |
www.irf.com
3
IRHNJ7130
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5 V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 25 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.19 — 0.25
V
GS
= 12V, I
D
= 9.1A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
— 0.18 — 0.24
V
GS
= 12V, I
D
= 9.1A
On-State Resistance (SMD-0.5)
V
SD
Diode Forward Voltage
—
1.5
—
1.5
V V
GS
= 0V, IS = 14.4A
100K Rads(Si)
1
300K to 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHNJ7130, IRHNJ3130, IRHNJ4130
2. Part number IRHNJ8130
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Radiation Characteristics
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Cu
28.0
285 43.0 100 100 100 80 60
Br
36.8
305 39.0 100 90 70 50 —
LET
Energy Range
V
DS
(V)
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
V
Cu
Br
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNJ8130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ7130 | 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |
| IRHNJ53034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ54034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRHNJ57034 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNJ4130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ4130SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ4230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ4230SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ4230SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。