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參數(shù)資料
| 型號(hào)： | IRHNA7360SE |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d為400V，的RDS（on）\u003d 0.20ohm，身份證\u003d 24.3A） |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 137K |
| 代理商： | IRHNA7360SE |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
320
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
320
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
2.3 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
20
6.4
—
—
—
16
—
—
—
137
6.4
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~35
V
DS
Bias
(V)
320
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
400
V
Ni
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
IRHNA7360SE Device
Radiation Characteristics
Table 1. Low Dose Rate
Parameter
IRHNA7360SE
100K Rads (Si)
min.
400
2.0
—
—
—
—
Units
Test Conditions
max.
—
4.5
100
-100
50
0.20
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Static Drain-to-Source
On-State Resistance One
V
SD
Diode Forward Voltage
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= 12V, I
D
=15.3A
nA
μ
A
—
1.35
V
TC = 25°C, IS = 24.3A,V
GS
= 0V
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10
5
Rads (Si)
are identical and are presented in Table 1, column
1, IRHNA7360SE. The values in Table 1 will be met
for either of the two low dose rate test circuits that
are used. Both pre- and post-radiation performance
are tested and specified using the same drive cir-
cuitry and test conditions in order to provide a direct
comparison. It should be noted that at a radiation
level of 1 x 10
5
Rads (Si), no change in limits are
specified in DC parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
To Order
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