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參數(shù)資料
| 型號： | IRHNA597260 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 2） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 119K |
| 代理商： | IRHNA597260 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-35.5
-22.5
-142
300
2.4
±20
320
-35.5
30
10
-55 to 150
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 ( for 5s )
3.3 ( Typical )
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA597260
200V, P-CHANNEL
TECHNOLOGY
08/07/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA597260 100K Rads (Si) 0.102
-35.5A
IRHNA593260 300K Rads (Si) 0.102
-35.5A
I
D
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
For footnotes refer to the last page
SMD-2
PD - 94168A
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