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參數(shù)資料
| 型號(hào)： | IRHNA57260SE |
| 英文描述： | 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package |
| 中文描述： | 200伏100kRad高可靠性單N通道看到一貼片MOSFET的硬化- 2包 |
| 文件頁(yè)數(shù)： | 7/8頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | IRHNA57260SE |
www.irf.com
7
Pre-Irradiation
IRHNB7064
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
GS
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
Starting T , Junction Temperature( C)
E
A
ID
16A
22A
35A
TOP
BOTTOM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHNA57264SE | 250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package |
| IRHNA5760SE | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 55A I(D) | SMT |
| IRHNA57Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHNA58Z60 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| IRHNA597160 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 52A I(D) | SMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHNA57260SED | 制造商:International Rectifier 功能描述:200V 43.000A HEXFET RADHARD - Bulk |
| IRHNA57260SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA57264SE | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 250V 45A 3SMD-2 - Rail/Tube |
| IRHNA5760SE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 55A I(D) | SMT |
| IRHNA57Z60 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET |
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