參數(shù)資料
型號(hào): IRHN8450
廠(chǎng)商: International Rectifier
英文描述: HEXFET Transistor(HEXFET 晶體管)
中文描述: 的HEXFET晶體管(之HEXFET晶體管)
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 310K
代理商: IRHN8450
IRHN7450, IRHN8450, JANSR-, JANSH-, 2N7270U Devices
www.irf.com
5
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress
Equals 80% of B
VDSS
During Radiation
Fig 9.
HighDoseRate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of
V
GSS
Equals 12 Volts
During Radiation
Post-Irradiation
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