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參數資料
| 型號： | IRHN7150 |
| 廠商： | International Rectifier |
| 英文描述： | Female Disconnect Solderless Terminal; Wire Size (AWG):12-10; Tab Width:0.250"; Insulator Color:Yellow; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 1） |
| 文件頁數： | 5/12頁 |
| 文件大?。?/td> | 284K |
| 代理商： | IRHN7150 |
www.irf.com
5
Pre-Irradiation
IRHN7150, JANSR2N7268U
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
Fig 9.
High Dose Rate
(Gamma Dot) Test Circuit
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During
1x10
12
Rad (Si)/Sec Exposure
Fig 8a.
Gate Stress of V
GSS
Equals 12 Volts During
Radiation
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