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參數(shù)資料
| 型號(hào)： | IRHM93250 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) |
| 中文描述： | 抗輻射功率MOSFET的通孔（T0代- 254AA） |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | IRHM93250 |
www.irf.com
3
Pre-Irradiation
IRHM9250
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage -200 — -200 — V V
GS
= 0V, I
D
= -1.0mA
V
GS(th)
Gate Threshold Voltage
-2.0 -4.0 -2.0 -5.0 V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate-to-Source Leakage Forward
— -100 — -100 nA
I
GSS
Gate-to-Source Leakage Reverse
— 100 — 100 V
GS
= 20 V
I
DSS
Zero Gate Voltage Drain Current
— -25 — -25 μA V
DS
=-160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.315 — 0.315
V
GS
= -12V, I
D
=-9.0A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.315 — 0.315
V
GS
= -12V, I
D
=-9.0A
On-State Resistance (TO-254AA)
V
SD
Diode Forward Voltage
— -3.6 — -3.6 V
1. IRHM9250 (JANSR2N7423)
2. IRHM93250 (JANSF2N7423)
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
V
GS
= -20V
V
GS
= 0V, IS = -14A
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
-250
-200
-150
-100
-50
0
0
5
10
15
20
VGS
V
Cu
Br
n
o
T
E
m
L
)
m
c
(
V
e
M
y
)
g
n
e
M
(
E
V
e
)
g
n
m
a
R
μ
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
=
S
G
V
@
V
0
1
=
S
G
V
@
V
5
1
=
S
G
V
@
V
0
2
=
S
G
V
@
u
C
8
2
5
8
2
3
4
0
0
2
0
0
2
0
0
2
0
0
2
—
r
B
8
3
5
0
3
9
3
0
0
2
0
0
2
0
6
1
5
7
—
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