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參數(shù)資料
| 型號： | IRHM9160 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A) |
| 中文描述： | 晶體管P溝道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.087ohm，身份證\u003d- 35 *甲） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 134K |
| 代理商： | IRHM9160 |
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
Test Conditions
RthJC
0.50
K/W
RthJA
Junction-to-Ambient
—
—
48
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
-35
-140
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.3
775
5.0
V
ns
μ
C
T
j
= 25°C, IS = -35A, VGS = 0V
Tj = 25°C, IF = -35A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
-100
—
Typ. Max. Units
—
—
-0.13
—
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25°C, ID = -1.0 mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
10
—
—
—
—
—
—
—
—
0.087
0.10
-4.0
—
-25
-250
VGS = 12V, ID = -22A
VGS = 12V, ID = -35A
VDS = VGS, ID = -1.0 mA
VDS > 15V, IDS = -22A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = +20V
VGS =12V, ID = -35A
VDS = Max. Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
200
50
90
70
240
220
150
—
VDD = -50V, ID = -35A,
RG = 2.35
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7000
2000
500
—
—
—
VGS = 0V, VDS = -25V
f = 1.0 MHz
IRHM9160 Device
Pre-Radiation
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
Modified MOSFET
symbol showing the
internal inductances.
nA
A
Next Data Sheet
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