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參數(shù)資料
| 型號(hào)： | IRHM7250SEUPBF |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 26 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 129K |
| 代理商： | IRHM7250SEUPBF |
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRHM7250SE
200V
0.10W
26A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Parameter
IRHM7250SE
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
26
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
16
IDM
Pulsed Drain Current
104
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
26
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
5.9
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from
case for 10 sec.)
Weight
9.3 (typical)
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
PD-91779
Pre-Irradiation
200Volt, 0.10W
W
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under identical pre- and post-irrradiation
test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
oC
A
REPETITIVE AVALANCHE AND dv/dt RATED
IRHM7250SE
HEXFET TRANSISTOR
www.irf.com
1
相關(guān)PDF資料 |
PDF描述 |
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| IRHM7250SEU | 26 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRHM7360SESCS | 22 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| IRHM7360SEU | 22 A, 400 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRHM7460SESCS | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| IRHM7460SEU | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHM7250U | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 26A I(D) | TO-254VAR |
| IRHM7260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM7260D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM7260SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM7260U | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 35A I(D) | TO-254VAR |
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