- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360958 > IRHG563110 TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP PDF資料下載
參數(shù)資料
| 型號： | IRHG563110 |
| 英文描述： | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| 中文描述： | 晶體管| MOSFET的|陣|互補(bǔ)| 100V的五（巴西）直| 960MA（?。﹟雙酯 |
| 文件頁數(shù)： | 4/14頁 |
| 文件大?。?/td> | 184K |
| 代理商： | IRHG563110 |
IRHG567110
4
www.irf.com
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100K Rads(Si)
1
300K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 2.0 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.226 — 0.246
V
GS
= 12V, I
D
= 1.0A
On-State Resistance (TO-39)
R
DS(on)
Static Drain-to-Source
— 0.29 — 0.31
V
GS
= 12V, I
D
= 1.0A
On-State Resistance (MO-036AB)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHG567110
2. Part number IRHG563110
V
GS
= 0V, IS =1.6A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Radiation Pre-Irradiation
Fig a.
Single Event Effect, Safe Operating Area
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-12.5V @V
=-15V
Br
36.7
309 39.5 100 100 100 100 100
I
59.8
341 32.5 100 100 100 90 25
LET
Energy Range
V
DS
(V)
@V
=-20V
80
20
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VGS
V
Br
I
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHG567110 | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| IRHM150 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254AA |
| IRHM250 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-254AA |
| IRHM450 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11.5A I(D) | TO-254AA |
| IRH250 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-204AE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHG567110 | 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1.6A/0.96A 14PIN MO-036AB - Rail/Tube |
| IRHG567110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG567110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHG57110 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 1.6A 14PIN MO-036AB - Rail/Tube |
| IRHG57110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。