參數(shù)資料
型號: IRHF9230
英文描述: -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
中文描述: - 200伏100kRad高可靠性單P溝道MOSFET的工貿(mào)硬化在TO - 205AF包
文件頁數(shù): 4/8頁
文件大?。?/td> 129K
代理商: IRHF9230
IRHF9230
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
1
10
100
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
-6.0V
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
1
10
100
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
1
10
100
5.0
5.5
-V , Gate-to-Source Voltage (V)
6.0
6.5
7.0
7.5
8.0
VDS
20μs PULSE WIDTH
-
D
T = 25 C
T = 150 C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
V
=
I
=
GS
D
-12V
-4.0A
相關(guān)PDF資料
PDF描述
IRHF93230 -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
JANSF2N7390 -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
JANSR2N7390 -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
IRHG563110 TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP
IRHG567110 TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRHF93130 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHF93230 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHG110 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 950MA I(D) | DIP
IRHG3110 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
IRHG3214 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE