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參數(shù)資料
| 型號： | IRHE93230 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 4A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的| P通道| 200伏五（巴西）直| 4A條（?。﹟ LLCC |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 149K |
| 代理商： | IRHE93230 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
-4.0
-2.4
-16
25
0.2
±20
171
-4.0
2.5
-27
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s)
0.42 (Typical)
g
PD - 91804D
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
MOSFET
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
3/1/00
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHE9230 100K Rads (Si)
IRHE93230 300K Rads (Si)
I
D
QPL Part Number
JANSR2N7390U
JANSF2N7390U
0.80
0.80
-4.0A
-4.0A
Features:
n
Single Event Effect (SEE) Hardened
n
Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Surface Mount
n
Light Weight
For footnotes refer to the last page
LCC - 18
IRHE9230
200V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
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